TITLE

Thermal conductivities of Si1-xGex nanowires with different germanium concentrations and diameters

AUTHOR(S)
Hyoungjoon Kim; Ilsoo Kim; Heon-jin Choi; Woochul Kim
PUB. DATE
June 2010
SOURCE
Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p233106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The thermal conductivities of Si1-xGex nanowires (NWs) synthesized with Ge concentrations of 0.0%, 0.4%, 4%, and 9% and different diameters were measured from 40 to 420 K. The thermal conductivity of Si1-xGex NWs decreases as the Ge concentration increases due to alloy scattering. As the diameter of the Si1-xGex NWs decreases, the thermal conductivity decreases due to phonon boundary scattering. However, the thermal conductivity dependency on the diameter of the NWs is not significant. This indicates that alloy scattering should be the dominant scattering mechanism in Si1-xGex NWs. This study should provide a basis for designing efficient thermoelectric devices out of Si1-xGex NWs and Si1-xGex nanocomposites.
ACCESSION #
51378965

 

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