Reduction of the transverse effective charge of optical phonons in ZnO under pressure

Reparaz, J. S.; Muniz, L. R.; Wagner, M. R.; Goñi, A. R.; Alonso, M. I.; Hoffmann, A.; Meyer, B. K.
June 2010
Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p231906
Academic Journal
From Raman scattering on a-plane wurtzite ZnO crystals we obtained a decreasing splitting between longitudinal and transversal optical phonons with A1 and E1 symmetry as a function of hydrostatic pressure up to 5.5 GPa. Consequently, the transverse effective charge (eT*) exhibits a strong reduction with increasing pressure, yielding 2.17–14.6×10-3 P/GPa and 2.04–13.7×10-3 P/GPa (in units of the elementary charge) for the A1 and E1 phonons, respectively. We find a clear systematic in the linear pressure coefficient of eT* with bond polarity for the series of wide-band gap semiconductors SiC, AlN, GaN, and ZnO.


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