TITLE

Microstructure of gallium nitride films grown on silicon (110)

AUTHOR(S)
Ruiz-Zepeda, F.; Contreras, O.; Dadgar, A.; Krost, A.
PUB. DATE
June 2010
SOURCE
Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p231908
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The microstructure of GaN layers grown on Si(110) is studied by transmission electron microscopy. The GaN layers were grown by metal-organic vapor phase epitaxy using low-temperature AlN interlayers and a high-temperature AlN seed layer. Anisotropic misfit strain originating at the AlN/Si(110) interface is notably reflected in the microstructure of the GaN layers. The stress produced in GaN/Si(110) films is relieved by bending of edge type threading dislocations over the basal plane, generating horizontal segments aligned all along the closely lattice matched direction [formula]. It is proposed that the horizontal defects are generated by a driven force with glide- and climb-components manifested on some of the prismatic slip planes of GaN. The general mechanism of the change in the propagation direction of dislocations is discussed.
ACCESSION #
51378954

 

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