Microstructure of gallium nitride films grown on silicon (110)

Ruiz-Zepeda, F.; Contreras, O.; Dadgar, A.; Krost, A.
June 2010
Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p231908
Academic Journal
The microstructure of GaN layers grown on Si(110) is studied by transmission electron microscopy. The GaN layers were grown by metal-organic vapor phase epitaxy using low-temperature AlN interlayers and a high-temperature AlN seed layer. Anisotropic misfit strain originating at the AlN/Si(110) interface is notably reflected in the microstructure of the GaN layers. The stress produced in GaN/Si(110) films is relieved by bending of edge type threading dislocations over the basal plane, generating horizontal segments aligned all along the closely lattice matched direction [formula]. It is proposed that the horizontal defects are generated by a driven force with glide- and climb-components manifested on some of the prismatic slip planes of GaN. The general mechanism of the change in the propagation direction of dislocations is discussed.


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