Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors

Lind, Erik; Niquet, Yann-Michel; Mera, Hector; Wernersson, Lars-Erik
June 2010
Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p233507
Academic Journal
We have investigated the accumulation capacitance-voltage characteristics for capacitors with narrow band gap materials using modeling and experiments. The capacitance for InAs and In0.53Ga0.47As capacitors with a HfO2 oxide layer has been calculated using atomistic tight-binding, effective mass, and semiclassical nonparabolic models. The simulations show that band structure effects have a strong influence on the accumulation capacitance, and are essential for the description of narrow band gap capacitors. The calculated tight binding data compare well with measurements on n-type InAs HfO2 capacitors on (100) and (111)B substrates, highlighting the nonparabolicity as the main origin for the large accumulation capacitance.


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