TITLE

Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes

AUTHOR(S)
Farrell, R. M.; Hsu, P. S.; Haeger, D. A.; Fujito, K.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.
PUB. DATE
June 2010
SOURCE
Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p231113
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate AlGaN-cladding-free m-plane InGaN/GaN laser diodes with threshold current densities that are comparable to state-of-the-art c-plane InGaN/GaN laser diodes. Thick InGaN waveguiding layers and a relatively wide active region with three 8 nm quantum wells were used to provide adequate refractive index contrast with the GaN cladding layers, thus eliminating the need for AlGaN cladding layers. Despite the large active region volume, lasing was achieved at a threshold current density of 1.54 kA/cm2, suggesting that the realization of even lower threshold current densities should be possible by reducing the number of quantum wells in the active region.
ACCESSION #
51378937

 

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