Electromigration-driven surface morphological stabilization of a coherently strained epitaxial thin film on a substrate

Sfyris, Georgios I.; Gungor, M. Rauf; Maroudas, Dimitrios
June 2010
Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p231911
Academic Journal
We analyze the surface morphological stability of a coherently strained thin film grown epitaxially on a thick elastic substrate under the simultaneous action of an electric field that drives surface electromigration. A model of driven film surface morphological evolution is developed and a linear stability analysis is carried out of the planar film surface morphology. The analysis reveals that surface electromigration can inhibit surface morphological instabilities due to the lattice mismatch between the film and the substrate. The critical electric-field strength for surface stabilization and the optimal electric-field direction are determined and the effects of surface diffusional anisotropy are examined.


Related Articles

  • The effect of a compliant substrate on the electromigration-driven surface morphological stabilization of an epitaxial thin film. Sfyris, Georgios I.; Gungor, M. Rauf; Maroudas, Dimitrios // Journal of Applied Physics;Jan2012, Vol. 111 Issue 2, p024905 

    We analyze the surface morphological stability of a coherently strained thin film that has been grown epitaxially on a compliant substrate of finite thickness and is subjected simultaneously to an external electric field, which drives surface electromigration. The compliant substrate has the...

  • The effect of a thermal gradient on the electromigration-driven surface morphological stabilization of an epitaxial thin film on a compliant substrate. Sfyris, Georgios I.; Dasgupta, Dwaipayan; Maroudas, Dimitrios // Journal of Applied Physics;Jul2013, Vol. 114 Issue 2, p023503 

    We report a theoretical analysis on the surface morphological stability of a coherently strained thin film that has been grown epitaxially on a deformable substrate and is simultaneously subjected to an external electric field and a temperature gradient. Using well justified approximations, we...

  • Influence of symmetry mismatch on heteroepitaxial growth of perovskite thin films. Proffit, D. L.; Jang, H. W.; Lee, S.; Nelson, C. T.; Pan, X. Q.; Rzchowski, M. S.; Eom, C. B. // Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p111912 

    Epitaxial thin films of (110) orthorhombic CaRuO3 grown on orthorhombic (110) NdGaO3 and cubic (001) (LaAlO3)0.3–(Sr2AlTaO6)0.7 (LSAT) substrates serve as a model system isolating the influence of oxygen octahedron distortion on epitaxial growth of thin films. CaRuO3 grows as a coherent...

  • Prediction of ordering and spontaneous rotation of epitaxial habits in substrate-coherent InGaN and GaAsSb. Liu, Jefferson Zhe; Trimarchi, Giancarlo; Zunger, Alex // Applied Physics Letters;8/24/2009, Vol. 95 Issue 8, p081901 

    Coherently strained In0.5Ga0.5N on GaN and CaO substrates are theoretically predicted to show stable ordering in the chalcopyrite structure, as is Ga2AsSb on GaAs and InP substrates. Depending on the substrate and the film concentration, we predict a spontaneous rotation of the stablest...

  • Homobuffer thickness effect on the background electron carrier concentration of epitaxial ZnO thin films. Yang, Z.; Zhou, H. M.; Chen, W. V.; Li, L.; Zhao, J. Z.; Yu, P. K. L.; Liu, D. J. L. // Journal of Applied Physics;Oct2010, Vol. 108 Issue 6, p066101 

    Epitaxial ZnO thin films were grown on r-plane sapphire substrates using plasma-assisted molecular-beam epitaxy. ZnO homobuffer layers grown at a lower temperature were introduced to improve the crystallinity of the top ZnO thin films. Thicker homobuffer layers lead to better crystallinity of...

  • Defects limiting performance of devices fabricated on GaN/metal heterostructure. Maximenko, Serguei I.; Freitas, Jaime A.; Mittereder, Jeffrey A.; Rowland, Larry B.; Kim, Jihyun // Applied Physics Letters;5/26/2008, Vol. 92 Issue 21, p212104 

    Ni Schottky barrier contacts were processed to characterize quality and suitability of GaN films grown on (111) face of titanium carbide metallic substrates for vertical device application. We found that defects such as voids (pores) in the GaN film strongly influence the optical and electrical...

  • Field-controllable exchange bias in epitaxial Fe films grown on GaAs. Choi, Seonghoon; Yoo, Taehee; Khym, S.; Lee, Sanghoon; Liu, X.; Furdyna, J. K. // Applied Physics Letters;9/24/2012, Vol. 101 Issue 13, p132403 

    We report that exchange bias observed in epitaxial Fe films grown on GaAs (001) substrates can be controlled by the direction of the cooling field. The effect is investigated by measuring the shift of field-cooled hysteresis loops toward specific field directions, as revealed by field scans of...

  • The Origin of Local Strain in Highly Epitaxial Oxide Thin Films. Ma, Chunrui; Ming Liu; Chonglin Chen; Yuan Lin; Yanrong Li; Horwitz, J. S.; Jiang, Jiechao; Meletis, E. I.; Qingyu Zhang // Scientific Reports;11/1/2013, p1 

    The ability to control the microstructures and physical properties of hetero-epitaxial functional oxide thin films and artificial structures is a long-sought goal in functional materials research. Normally, only the lattice misfit between the film and the substrate is considered to govern the...

  • Bandgap bowing in BGaN thin films. Ougazzaden, A.; Gautier, S.; Moudakir, T.; Djebbour, Z.; Lochner, Z.; Choi, S.; Kim, H. J.; Ryou, J.-H.; Dupuis, R. D.; Sirenko, A. A. // Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p083118 

    We report on the bandgap variation in thin films of BxGa1-xN grown on AlN/sapphire substrates using metal-organic vapor phase epitaxy. Optical transmission, photoluminescence, and x-ray diffraction were utilized to characterize the materials’ properties of the BxGa1-xN films. In contrast...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics