Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In–Ga–Zn oxide-based ferroelectric memory transistor

Sung-Min Yoon; Shin-Hyuk Yang; Soon-Won Jung; Chun-Won Byun; Sang-Hee Ko Park; Chi-Sun Hwang; Gwang-Geun Lee; Tokumitsu, Eisuke; Ishiwara, Hiroshi
June 2010
Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p232903
Academic Journal
We characterized the nonvolatile memory thin-film transistors, which was composed of an amorphous indium-gallium-zinc oxide (α-IGZO) active channel and a ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] gate insulator, and investigated the impact of an interface controlling layer. Excellent device performances, such as the field-effect mobility of 60.9 cm2 V-1 s-1, the subthreshold swing of 120 mV/dec, and the memory window of 6.4 V at ±12 V programming, were confirmed for the device without any interface layer. However, the memory retention time was very short. The retention behaviors could be dramatically improved when 4 nm thick Al2O3 layer was introduced between the P(VDF-TrFE) and α-IGZO.


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