Controlled electronic transport in single-walled carbon nanotube networks: Selecting electron hopping and chemical doping mechanisms

Han, Z. J.; Ostrikov, K.
June 2010
Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p233115
Academic Journal
The electronic transport in both intrinsic and acid-treated single-walled carbon nanotube networks containing more than 90% semiconducting nanotubes is investigated using temperature-dependent resistance measurements. The semiconducting behavior observed in the intrinsic network is attributed to the three-dimensional electron hopping mechanism. In contrast, the chemical doping mechanism in the acid-treated network is found to be responsible for the revealed metal-like linear resistivity dependence in a broad temperature range. This effective method to control the electrical conductivity of single-walled carbon nanotube networks is promising for future nanoscale electronics, thermometry, and bolometry.


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