TITLE

Room temperature infrared photoresponse of self assembled Ge/Si (001) quantum dots grown by molecular beam epitaxy

AUTHOR(S)
Singha, R. K.; Manna, S.; Das, S.; Dhar, A.; Ray, S. K.
PUB. DATE
June 2010
SOURCE
Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p233113
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the observation of intraband near infrared (∼3.1 μm) and mid infrared (∼6.2 μm) photocurrent response at room temperature using Ge/Si self-assembled quantum dots grown by molecular beam epitaxy. Due to the bimodal size distribution and SiGe intermixing, distinguishable photoluminescence transitions are observed at 10 K, below and above the optical band gap of bulk Ge. The observed redshift in photocurrent with increasing temperature has been explained by the excitonic electric field originated due to infrared excitation at low temperatures. A good correlation between the spectral photocurrent response and photoluminescence of the quantum dots has been established.
ACCESSION #
51378915

 

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