TITLE

Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching

AUTHOR(S)
de Mierry, P.; Kriouche, N.; Nemoz, M.; Chenot, S.; Nataf, G.
PUB. DATE
June 2010
SOURCE
Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p231918
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
It is shown that [formula]-oriented GaN films can be achieved from r-sapphire patterned by chemical etching. Growth first occurs selectively from the inclined c-facet of sapphire, leading finally to a fully coalesced layer with (1122) orientation. The structural and optical quality of these layers was assessed by x-ray diffraction, cathodoluminescence and photoluminescence measurements. The results clearly show that the quality of (1122) GaN on patterned r-sapphire is markedly improved in comparison with (1122) GaN on m-sapphire.
ACCESSION #
51378914

 

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