Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching

de Mierry, P.; Kriouche, N.; Nemoz, M.; Chenot, S.; Nataf, G.
June 2010
Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p231918
Academic Journal
It is shown that [formula]-oriented GaN films can be achieved from r-sapphire patterned by chemical etching. Growth first occurs selectively from the inclined c-facet of sapphire, leading finally to a fully coalesced layer with (1122) orientation. The structural and optical quality of these layers was assessed by x-ray diffraction, cathodoluminescence and photoluminescence measurements. The results clearly show that the quality of (1122) GaN on patterned r-sapphire is markedly improved in comparison with (1122) GaN on m-sapphire.


Related Articles

  • Mechanical stress in gallium-arsenide on silicon substrates. Budnick, B.; Wilke, K.; Heymann, G. // Journal of Applied Physics;8/1/1994, Vol. 76 Issue 3, p1989 

    Presents information on a study which investigated the mechanical stress of thin gallium arsenide layers on silicon by photo- and cathodoluminescence and x-ray diffraction. Analysis of the thickness of gallium arsenide layers; Methodology of the study; Results and discussion.

  • The study of silver sulfide layers formed on the polyamide film surface. Krylova, Valentina // Chemija;2012, Vol. 23 Issue 3, p203 

    Layers of silver sulfide, Ag2S, on the PA film surface were formed by the chemical bath deposition method (CBD). Film samples were exposed in acidified solutions of silver nitrate, AgNO3, and sodium thiosulfate, Na2S2O3. Zeta potential (ζ) measurement was applied for estimating the stability...

  • Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates. Pernot, J.; Bustarret, E.; Rudzinski, M.; Hageman, P. R.; Larsen, P. K. // Journal of Applied Physics;2/1/2007, Vol. 101 Issue 3, p033536 

    The strain of GaN layers grown by metal organic chemical vapor deposition on three vicinal 4H-SiC substrates (0°, 3.4°, and 8° off cut from [0001] towards [11-20] axis) is investigated by x-ray diffraction, Raman scattering, and cathodoluminescence. The strain relaxation mechanisms are...

  • Spontaneous compositional superlattice and band-gap reduction in Si-doped AlxGa1-xN epilayers. Gao, M.; Lin, Y.; Bradley, S. T.; Ringel, S. A.; Hwang, J.; Schaff, W. J.; Brillson, L. J. // Applied Physics Letters;11/7/2005, Vol. 87 Issue 19, p191906 

    Combined transmission electron microscopy (TEM), x-ray diffraction, and cathodoluminescence spectroscopy measurements of AlxGa1-xN thin films grown by molecular-beam epitaxy reveal spontaneous modulation, phase separation, and band-gap reductions that vary systematically with AlN mole fraction...

  • Atomically smooth and single crystalline MnTiO3 thin films with a ferrotoroidic structure. Toyosaki, H.; Kawasaki, M.; Tokura, Y. // Applied Physics Letters;8/18/2008, Vol. 93 Issue 7, p072507 

    We report the epitaxial growth and magnetic properties of MnTiO3 thin films with an ilmenite structure. Although the lattice mismatch with sapphire substrates was as large as 8.0%, highly crystalline films with atomically flat surfaces were grown by using pulsed laser deposition. X-ray...

  • Thermal transport in thin films measured by time-resolved, grazing incidence x-ray diffraction. Walko, D. A.; Sheu, Y.-M.; Trigo, M.; Reis, D. A. // Journal of Applied Physics;Nov2011, Vol. 110 Issue 10, p102203 

    We use depth- and time-resolved x-ray diffraction to study thermal transport across single crystal Bi films grown on sapphire in order to determine the thermal conductivity of the film and the Kapitza conductance of the interface. Ultrafast Ti:sapphire laser pulses were used to heat the films;...

  • Thermally driven solid-phase epitaxy of laser-ablated amorphous AlFe films on (0001)-oriented sapphire single crystals. Trautvetter, Moritz; Wiedwald, Ulf; Paul, Heiko; Minkow, Alexander; Ziemann, Paul // Applied Physics A: Materials Science & Processing;Mar2011, Vol. 102 Issue 3, p725 

    Solid-phase epitaxy is demonstrated for the metallic binary alloy AlFe. Stoichiometric thin films are deposited at ambient temperature onto c-cut sapphire by pulsed laser deposition (PLD), resulting in smooth amorphous films as revealed by X-ray diffraction (XRD) and atomic force microscopy...

  • Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors. Kokubun, Yoshihiro; Miura, Kasumi; Endo, Fumie; Nakagomi, Shinji // Applied Physics Letters;1/15/2007, Vol. 90 Issue 3, p031912 

    β-Ga2O3 thin films have been prepared on (0001) sapphire substrates by the sol-gel method. X-ray diffraction showed that β-Ga2O3 polycrystalline films were formed at heat-treatment temperatures above 600 °C. With increasing heat-treatment temperature above 900 °C, the lattice...

  • Epitaxial Growth of InxGa1-xN Alloy Films on Sapphire and Silicon by Reactive Co-sputtering of GaAs and Indium. Mohan, Shyam; Major, S. S.; Srinivasa, R. S. // AIP Conference Proceedings;2015, Vol. 1665, p1 

    InxGa1-xN alloy films (0.2


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics