TITLE

Surround-gated vertical nanowire quantum dots

AUTHOR(S)
van Weert, M. H. M.; den Heijer, M.; van Kouwen, M. P.; Algra, R. E.; Bakkers, E. P. A. M.; Kouwenhoven, L. P.; Zwiller, V.
PUB. DATE
June 2010
SOURCE
Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p233112
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report voltage dependent photoluminescence experiments on single indium arsenide phosphide (InAsP) quantum dots embedded in vertical surround-gated indium phosphide (InP) nanowires. We show that by tuning the gate voltage, we can access different quantum dot charge states. We study the anisotropic exchange splitting by polarization analysis, and identify the neutral and singly charged exciton. These results are important for spin addressability in a charge tunable nanowire quantum dot.
ACCESSION #
51378913

 

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