Performance improvement of phase-change memory cell with Ge2Sb2Te5-HfO2 composite films

Sannian Song; Zhitang Song; Bo Liu; Liangcai Wu; Songlin Feng
June 2010
Applied Physics A: Materials Science & Processing;Jun2010, Vol. 99 Issue 4, p767
Academic Journal
The phase-change characteristics of Ge2Sb2Te5 (GST) films for phase-change random access memory (PCM) devices were improved by incorporating HfO2 into GST film using cosputtering at room temperature. Phase separation (GST-rich nanocrystals were surrounded by HfO2-rich amorphous phase) has been observed in annealed GST-HfO2 composite films and the segregated domains exhibited a relatively uniform size. The reduced reset voltage of GST-HfO2 based cell was due to the reduced programming volume by incorporating HfO2 into GST. This work clearly reveals the highly promising potential of GST-HfO2 composite films for application in PCM.


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