TITLE

Strong coupling in a quantum dot micropillar system under electrical current injection

AUTHOR(S)
Kistner, C.; Morgener, K.; Reitzenstein, S.; Schneider, C.; Höfling, S.; Worschech, L.; Forchel, A.; Yao, P.; Hughes, S.
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/31/2010, Vol. 96 Issue 22, p221102
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Integrating In0.3Ga0.7As quantum dots (QDs) featuring a high oscillator strength into a high quality electrically contacted micropillar cavity enabled us to realize strong coupling under electrical carrier injection. In the micropillar cavity with a quality factor of 10 000 and a diameter of 1.9 μm, a vacuum Rabi splitting of 108 μeV was observed when an electrically excited QD exciton was tuned through resonance with the fundamental cavity mode by varying the temperature.
ACCESSION #
51227072

 

Related Articles

  • Frequency dependent electrical characteristics of PbS quantum dots. S. Chowdhury; A. Hussain; G. Ahmed; A. Choudhury // European Physical Journal - Applied Physics;May2008, Vol. 42 Issue 2, p113 

    PbS quantum dots (bare and silica coated) have been synthesized in PVA matrix with average size 10?nm and 9?nm. The capacitance-voltage (C-V) and current ?voltage (I-V) response of both bare and coated quantum dots have been recorded in different frequency range (Hz?MHz). Both the samples show...

  • Spin Dynamics of a Single Mn Ion in a CdTe/(Cd, Mg, Zn)Te Quantum Dot. Goryca, Mateusz; Kossacki, Piotr; Golnik, Andrzej; Kazimierczuk, Tomasz; Wojnar, Piotr; Nawrocki, Michał // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p453 

    The spin dynamics of a single Mn ion confined in a CdTe/(Cd, Mg, Zn)Te quantum dot is determined by measurements of photon correlation of photoluminescence. The characteristic time of spin flip is a few nanoseconds and strongly depends on the excitation power.

  • Localized formation of InAs quantum dots on shallow-patterned GaAs(100). Wang, Zh. M.; Lee, J. H.; Liang, B. L.; Black, W. T.; Kunets, Vas. P.; Mazur, Yu. I.; Salamo, G. J. // Applied Physics Letters;6/5/2006, Vol. 88 Issue 23, p233102 

    Selective formation of InAs quantum dots on the sidewalls of mesa strips along both [01-1] and [011] directions of a GaAs(100) surface is demonstrated. This result is in sharp contrast to observations on traditionally deep-patterned substrates, where quantum dots are formed on top mesas and at...

  • Quantum Electrodynamics with Semiconductor Quantum Dots Coupled to Anderson-localized Random Cavities. Sapienza, Luca; Thyrrestrup, Henri; Stobbe, So\ren; Garcia, Pedro David; Smolka, Stephan; Lodahl, Peter // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p999 

    We demonstrate that the spontaneous emission decay rate of semiconductor quantum dots can be strongly modified by the coupling to disorder-induced Anderson-localized photonic modes. We experimentally measure, by means of time-resolved photoluminescence spectroscopy, the enhancement of the...

  • Dynamics of a two-state quantum dot laser with saturable absorber. Viktorov, E. A.; Cataluna, M. A.; O’Faolain, L.; Krauss, T. F.; Sibbett, W.; Rafailov, E. U.; Mandel, Paul // Applied Physics Letters;3/19/2007, Vol. 90 Issue 12, p121113 

    The authors study the regime of self-pulsations in a two-state quantum dot laser with saturable absorber. Experiments demonstrate and theory explains the appearance of self-pulsations at low relaxation oscillation frequency. The system exhibits a period doubling sequence of bifurcations leading...

  • Optical properties of InAs quantum dots with InAlAs/InGaAs composite matrix. Liu, Wei-Sheng; Chyi, Jen-Inn // Journal of Applied Physics;1/15/2005, Vol. 97 Issue 2, p024312 

    InAs quantum dots (QDs) in various matrices, such as InAlAs, InGaAs, InAlAs/InGaAs, and InGaAs/InAlAs, are prepared to clarify how the overgrown layers affect their optical properties. It is shown that strain reduction mechanism dominates the emission wavelength extension when the thickness of...

  • Intermixing of InGaAs quantum dots grown by cycled monolayer deposition. Djie, H. S.; Wang, D.-N.; Ooi, B. S.; Hwang, J. C. M.; Fang, X.-M.; Wu, Y.; Fastenau, J. M.; Liu, W. K. // Journal of Applied Physics;8/1/2006, Vol. 100 Issue 3, p033527 

    We investigate the thermal induced intermixing and the diffusion kinetics of InGaAs quantum dots grown by cycled monolayer deposition subjected to the overgrowth and ex situ annealing. The group-III intermixing, that obeys the Fickian law, reaches a steady state after ex situ annealing up to 850...

  • Spatial ordering of quantum dots in microdisks. Xie, Z. G.; Solomon, G. S. // Applied Physics Letters;8/29/2005, Vol. 87 Issue 9, p093106 

    We demonstrate the spatial localization of optically active InAs quantum dots in the narrow whispering gallery mode region of a GaAs microdisk cavity. This is achieved through preferential In adatom surface diffusion on a partial cavity structure in a way that can be generalized to other optical...

  • Nonlinear optical response of a single self-assembled InGaAs quantum dot: A femtojoule pump-probe experiment. Wesseli, M.; Ruppert, C.; Trumm, S.; Krenner, H. J.; Finley, J. J.; Betz, M. // Applied Physics Letters;5/15/2006, Vol. 88 Issue 20, p203110 

    A single InGaAs/GaAs quantum dot is addressed in a two-color femtosecond transmission experiment in the optical near-field of a nanometer-scale shadow mask. After resonant excitation of the wetting layer beneath the nanoisland, we detect transmission changes of the quantum dot with narrow band...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics