Spin-orbit interaction effects on magnetoresistance in graphene-based ferromagnetic double junctions

Chunxu Bai; Juntao Wang; Shuanwen Jia; Yanling Yang
May 2010
Applied Physics Letters;5/31/2010, Vol. 96 Issue 22, p223102
Academic Journal
Based on the transfer-matrix method, the spin polarized transport properties through a ballistic graphene-based quantum tunneling junctions with the spin-orbit interaction have been investigated. It is found that the magnetoresistance (MR) oscillates with the Rashba spin-orbit interaction (RSOI) and the intrinsic spin-orbit interaction (ISOI). In addition, when the RSOI is present, the negative MR can be observed due to the spin-flip effect, whereas for the ISOI alone no such negative MR can be found. It is anticipated to apply such a phenomenon to design the electron devices based on the graphene.


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