TITLE

Synthesis and characterization of CsSnI3 thin films

AUTHOR(S)
Kai Shum; Zhuo Chen; Qureshi, Jawad; Chonglong Yu; Wang, Jian J.; Pfenninger, William; Vockic, Nemanja; Midgley, John; Kenney, John T.
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/31/2010, Vol. 96 Issue 22, p221903
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the synthesis and characterization of CsSnI3 perovskite semiconductor thin films deposited on inexpensive substrates such as glass and ceramics. These films contained polycrystalline domains with typical size of 300 nm. It is confirmed experimentally that CsSnI3 compound in its black phase is a direct band-gap semiconductor, consistent with the calculated band structure from the first principles. The band gap is determined to be ∼1.3 eV at Γ point at room temperature.
ACCESSION #
51227046

 

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