TITLE

Characterization of electronic structure of silicon nanocrystals in silicon nitride by capacitance spectroscopy

AUTHOR(S)
Chang-Hee Cho; Baek-Hyun Kim; Sang-Kyun Kim; Seong-Ju Park
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/31/2010, Vol. 96 Issue 22, p223110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electronic structure of silicon nanocrystals embedded in a silicon nitride insulating film is identified by using a capacitance spectroscopy. The tunneling capacitor device, which is used in this study, consists of a tunneling silicon nitride, an array of silicon nanocrystals embedded in a silicon nitride film, and a blocking silicon nitride deposited on p-type (100) Si substrate. The absolute position of the lowest conduction and the highest valence levels of the silicon nanocrystal is revealed and the band-gap energy of silicon nanocrystals estimated by the capacitance spectroscopy agrees well with that measured by photoluminescence spectroscopy.
ACCESSION #
51227032

 

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