TITLE

Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

AUTHOR(S)
Suk Choi; Hee Jin Kim; Seong-Soo Kim; Jianping Liu; Jeomoh Kim; Jae-Hyun Ryou; Dupuis, Russell D.; Fischer, Alec M.; Ponce, Fernando A.
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/31/2010, Vol. 96 Issue 22, p221105
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
InAlN electron-blocking layers (EBLs) are shown to improve the emission intensity and to mitigate the efficiency droop problem in III-nitride-based visible light-emitting diodes (LEDs). Using an In0.18Al0.82N EBL in blue LEDs, we have achieved a significant improvement in the electroluminescence emission intensity and a mitigated efficiency droop compared to similar LEDs without an EBL or with an Al0.2Ga0.8N EBL. This indicates that an In0.18Al0.82N EBL is more effective in electron confinement and reduces the efficiency droop possibly caused by carrier spill-over than conventional AlGaN EBLs.
ACCESSION #
51227029

 

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