Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

Hader, J.; Moloney, J. V.; Koch, S. W.
May 2010
Applied Physics Letters;5/31/2010, Vol. 96 Issue 22, p221106
Academic Journal
It is shown that a carrier loss process modeling density-activated defect recombination can reproduce the experimentally observed droop of the internal quantum efficiency in GaN-based laser diodes.


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