TITLE

Quantum confinement effects in Si/Ge heterostructures with spatially ordered arrays of self-assembled quantum dots

AUTHOR(S)
Agafonov, Oleksiy B.; Dais, Christian; Grützmacher, Detlev; Haug, Rolf J.
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/31/2010, Vol. 96 Issue 22, p222107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Magnetotunneling spectroscopy was employed to probe the confinement in vertical Si/Ge double-barrier resonant tunneling diodes with regularly distributed Ge quantum dots. Their current-voltage characteristics reveal a steplike behavior in the vicinity of zero bias, indicating resonant tunneling of heavy-holes via three-dimensionally confined unoccupied hole states in Ge quantum dots. Assuming parabolic confinement, we extract the strength of the confinement potential of quantum dots.
ACCESSION #
51227021

 

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