Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing

Li-Wei Feng; Chun-Yen Chang; Yao-Feng Chang; Ting-Chang Chang; Shin-Yuan Wang; Shih-Ching Chen; Chao-Cheng Lin; Shih-Cheng Chen; Pei-Wei Chiang
May 2010
Applied Physics Letters;5/31/2010, Vol. 96 Issue 22, p222108
Academic Journal
In this paper, the influence of a 600 °C rapid thermal annealing for 60 s on the improvements of resistance switching behaviors in a TiN/SiO2/FeOx/FePt structure is reported. It is found that besides the distinct reduction in memory switching parameters in forming voltage, set/reset voltages, and their dispersions, the resistance ratio of high-resistance state to low-resistance state is also enlarged after annealing. The effects of annealing on improving the resistance switching properties are discussed by x-ray diffraction and x-ray photon-emission spectra depth profile results. Additionally, good retention characteristics are exhibited in the annealed TiN/SiO2/FeOx/FePt resistance switching memory.


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