TITLE

Temperature effects on metal-alumina-nitride-oxide-silicon memory operations

AUTHOR(S)
Padovani, Andrea; Larcher, Luca; Heh, Dawei; Bersuker, Gennadi; Della Marca, Vincenzo; Pavan, Paolo
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/31/2010, Vol. 96 Issue 22, p223505
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present a detailed investigation of temperature effects on the operation of TaN/Al2O3/Si3N4/SiO2/Si (TANOS) memory devices. We show that not only retention but also program and erase operations are affected significantly by temperature. Using a large set of experimental data and simulations on a variety of TANOS stacks, we show that the temperature dependence of TANOS program and erase operations can be explained by accounting for that the alumina dielectric constant increases by 20%–25% over a 125 K temperature range.
ACCESSION #
51227013

 

Related Articles

  • Individually addressable epitaxial ferroelectric nanocapacitor arrays with near Tb inch−2 density. Woo Lee; Hee Han; Lotnyk, Andriy; Schubert, Markus Andreas; Senz, Stephan; Alexe, Marin; Hesse, Dietrich; Baik, Sunggi; Gösele, Ulrich // Nature Nanotechnology;Jul2008, Vol. 3 Issue 7, p402 

    Ferroelectric materials have emerged in recent years as an alternative to magnetic and dielectric materials for nonvolatile data-storage applications. Lithography is widely used to reduce the size of data-storage elements in ultrahigh-density memory devices. However, ferroelectric materials tend...

  • Structural and compositional dependence of gadolinium-aluminum oxide for the application of charge-trap-type nonvolatile memory devices. Youngmin Park; Jong Kyung Park; Myeong Ho Song; Sung Kyu Lim; Jae Sub Oh; Moon Sig Joo; Kwon Hong; Byung Jin Cho // Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p052907 

    The structural and compositional dependence of gadolinium-aluminum oxide (GdAlO) for application to nonvolatile memory is investigated. An addition of Gd into AlO reduces the leakage current, which improves the erase window. The GdAlO film crystallizes into many different phases after annealing...

  • Conductance-dependent negative differential resistance in organic memory devices. You, Y. T.; Wang, M. L.; Xuxie, H. N.; Wu, B.; Sun, Z. Y.; Hou, X. Y. // Applied Physics Letters;12/6/2010, Vol. 97 Issue 23, p233301 

    Single-layer organic memories made of organic material with good conductance have been characterized. Asymmetrical bistable behaviors under biases of opposite polarities are observed for devices with asymmetric electrodes. It is experimentally confirmed that a close correlation exists between...

  • Retention time in multiple-tunnel junction memory device. Jalil, M. B. A.; Wagner, M. // Journal of Applied Physics;1/15/1999, Vol. 85 Issue 2, p1203 

    Presents information on a study which calculated the retention time of charges stored on a memory node of a multiple-tunnel junction (MTJ) memory device using a computationaly inexpensive approximation. Basic equations for MTJ; Cotunneling contribution of the current; Retention time in actual...

  • Effect of write field rise times on the switching thresholds of pseudo spin value... Pohm, A.V.; Anderson, J.M. // Journal of Applied Physics;4/15/1999 Part 2A of 2, Vol. 85 Issue 8, p4771 

    Investigates the effect of write field rise times on the switching thresholds of pseudo spin valve memory cells. Experimental procedure; Results.

  • Switching dependence on fabrication accuracy of tapered ends of a single giant magnetoresistance... Redjdal, M.; Gross, P.W. // Journal of Applied Physics;4/15/1999 Part 2B of 2, Vol. 85 Issue 8, p6193 

    Investigates the dependence of the magnetic switching behavior of the magnetic layers of a pseudospin valve memory cell with tapered ends in word disturb condition. Simulation technique; Results.

  • Dielectric and Electrical Conductivity Relaxation in 0.5Li2O-0.5Na2O-2B2O3 Glasses. Vaish, Rahul; Varma, K.B.R. // Journal of Electronic Materials;Aug2010, Vol. 39 Issue 8, p1334 

    The frequency and temperature dependence of the dielectric constant, electric modulus, and electrical conductivity of the transparent glasses of composition 0.5Li2O-0.5Na2O-2B2O3 were investigated in the 100 Hz to 10 MHz frequency range. The dielectric data have been analyzed using the...

  • Dielectric and Ac Conductivity Studies of Mn-Doped Na1:86Li0:10K0:04Ti3O7 Ceramics. SINGH, R.; SHRIPAL // Acta Physica Polonica, A.;Jan2014, Vol. 125 Issue 1, p67 

    Dielectric-spectroscopic and ac conductivity studies on 0.01 and 1.0 molar percentage manganese doped layered Na1:86Li0:10K0:04Ti3O7 ceramics have been reported. The dependence of loss tangent (tan δ) and relative permittivity (εr) on temperature in the range 350-775 K and on frequency in...

  • Ferroelectric memory. Vorotilov, K.; Sigov, A. // Physics of the Solid State;May2012, Vol. 54 Issue 5, p894 

    The current status of developments in the field of ferroelectric memory devices has been considered. The rapidly growing market of non-volatile memory devices has been analyzed, and the current state of the art and prospects for the scaling of parameters of non-volatile memory devices of...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics