TITLE

Surface 210 nm light emission from an AlN p–n junction light-emitting diode enhanced by A-plane growth orientation

AUTHOR(S)
Taniyasu, Yoshitaka; Kasu, Makoto
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/31/2010, Vol. 96 Issue 22, p221110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
[formula] A-plane AlN p–n junction light-emitting diode (LED) with a wavelength of 210 nm is demonstrated. The electroluminescence from the A-plane LED is inherently polarized for the electric field parallel to the [0001] c-axis due to a negative crystal-field splitting energy. The polarization ratio (electric-field component ratio of parallel and perpendicular to c-axis) is as high as 0.9. The radiation pattern of the A-plane LED shows higher emission intensity along the surface normal, while that of a conventional (0001) C-plane LED shows lower emission intensity along the surface normal. The different radiation patterns can be explained by the polarization property.
ACCESSION #
51227012

 

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