Silicon surface passivation by an organic overlayer of 9,10-phenanthrenequinone

Avasthi, Sushobhan; Yabing Qi; Vertelov, Grigory K.; Schwartz, Jeffrey; Kahn, Antoine; Sturm, James C.
May 2010
Applied Physics Letters;5/31/2010, Vol. 96 Issue 22, p222109
Academic Journal
Merged organic-silicon heterojunction devices require the passivation of dangling bonds at the silicon surface, preferably with a low-temperature process. In this paper, we demonstrate the high-quality passivation of the silicon (100) surface using an organic molecule (9,10-phenanthrenequinone, PQ). PQ reacts with the dangling bonds, thus providing a bridge between organic semiconductors and silicon. We measure low recombination velocities (∼150 cm/s) at the PQ-silicon interface. Metal/organic-insulator/silicon capacitors and transistors prove that at PQ-silicon interface, the Fermi level can be modulated. The formation of an inversion layer with electron mobility of 600 cm2/V·s further demonstrates the passivation quality of PQ.


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