TITLE

Persistent photoconductivity due to trapping of induced charges in Sn/ZnO thin film based UV photodetector

AUTHOR(S)
Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/31/2010, Vol. 96 Issue 22, p223507
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photoconductivity relaxation in rf magnetron sputtered ZnO thin films integrated with ultrathin tin metal overlayer is investigated. Charge carriers induced at the ZnO-metal interface by the tin metal overlayer compensates the surface lying trap centers and leads to the enhanced photoresponse. On termination of ultraviolet radiation, recombination of the photoexcited electrons with the valence band holes leaves the excess carriers deeply trapped at the recombination center and holds the dark conductivity level at a higher value. Equilibrium between the recombination centers and valence band, due to trapped charges, eventually stimulates the persistent photoconductivity in the Sn/ZnO photodetectors.
ACCESSION #
51226999

 

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