Thermal expansion and elastic properties of InN

Wang, Kai; Reeber, Robert R.
September 2001
Applied Physics Letters;9/10/2001, Vol. 79 Issue 11
Academic Journal
The thermal expansion coefficients of wurtzite structure InN are evaluated within the constraints of a basic model and predicted for an extended temperature range. Together with the elastic constants provided earlier, this information gives a basis for optimizing thin-film growth conditions and thereby reducing the residual stresses in group-III-nitride thin-film devices. © 2001 American Institute of Physics.


Related Articles

  • Turbostratic boron carbonitride film and its field-emitting behavior. Jie Yu; Wang, E.G. // Applied Physics Letters;5/17/1999, Vol. 74 Issue 20, p2948 

    Studies the turbostratic structure of boron carbonitride films with various compositions synthesized by bias-assisted hot-filament chemical vapor deposition. Incorporation of boron atoms into the structure; Interplanar spacing; Field-emission behavior of the films.

  • The piezoelectric coefficient of gallium nitride thin films. Muensit, S.; Guy, I. L. // Applied Physics Letters;4/13/1998, Vol. 72 Issue 15 

    A laser interferometer was used to measure the d[sub 33] piezoelectric coefficient of wurtzite GaN. The GaN was in the form of 1 μm thick films, grown by chemical vapor deposition and the measurement of the piezoelectric coefficient was made with a spatial resolution of 100 μm. Sample...

  • Atomic ordering and the surface morphology of thin films. Le´onard, Franc¸ois; Desai, Rashmi C. // Applied Physics Letters;7/13/1998, Vol. 73 Issue 2 

    The formation of ordered phases and associated surface instabilities during the growth of alloy films is studied using a nonequilibrium model. It is shown that considerations of the epitaxial thermodynamic energy as well as dynamical processes at the surface lead to a coupling between the order...

  • Structural and optical properties of high-quality ZnTe homoepitaxial layers. Chang, J. H.; Cho, M. W.; Wang, H. M.; Wenisch, H.; Hanada, T.; Yao, T.; Sato, K.; Oda, O. // Applied Physics Letters;8/28/2000, Vol. 77 Issue 9 

    The structural and optical properties of high-quality homoepitaxial ZnTe films are investigated. A substrate surface treatment using diluted HF solution plays a key role in growing device-quality ZnTe layers. X-ray diffraction analysis of ZnTe epilayers based on the crystal-truncation-rod method...

  • Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films. Xin, Y.; James, E. M.; James, E.M.; Arslan, I.; Sivananthan, S.; Browning, N. D.; Browning, N.D.; Pennycook, S. J.; Pennycook, S.J.; Omnes, F.; Beaumont, B.; Faurie, J-P.; Faurie, J.-P.; Gibart, P. // Applied Physics Letters;1/24/2000, Vol. 76 Issue 4 

    The electronic structure of pure edge threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films has been studied directly by atomic resolution Z-contrast imaging and electron energy loss spectroscopy in a scanning transmission electron microscope. Dislocation cores...

  • Hall-effect analysis of GaN films grown by hydride vapor phase epitaxy. Go¨tz, W.; Romano, L. T.; Walker, J.; Johnson, N. M.; Molnar, R. J. // Applied Physics Letters;3/9/1998, Vol. 72 Issue 10 

    Hall-effect measurements were conducted on unintentionally doped n-type GaN films grown on sapphire substrates by hydride vapor phase epitaxy. Film nucleation involved either a GaCl or ZnO pretreatment. Variable temperature Hall-effect measurements reveal a dependence of both the electron...

  • Nanoindentation of epitaxial GaN films. Kucheyev, S. O.; Kucheyev, S.O.; Bradby, J. E.; Bradby, J.E.; Williams, J. S.; Williams, J.S.; Jagadish, C.; Toth, M.; Phillips, M. R.; Phillips, M.R.; Swain, M. V.; Swain, M.V. // Applied Physics Letters;11/20/2000, Vol. 77 Issue 21 

    Wurtzite GaN films grown on sapphire substrates are studied by nanoindentation with a spherical indenter. No systematic dependence of the mechanical properties of GaN epilayers on the film thickness (at least for thicknesses from 1.8 to 4 μm) as well as on doping type is observed. Slip is...

  • Thermally annealed GaN nucleation layers and the device-quality metal organic chemical vapor deposition growth of Si-doped GaN films on (00.1) sapphire. Wickenden, D. K.; Miragliotta, J. A.; Bryden, W. A.; Kistenmacher, T. J. // Journal of Applied Physics;6/1/1994, Vol. 75 Issue 11, p7585 

    Investigates the effect of epitaxial growth temperature on the properties of silicon-doped gallium nitride layers on self-nucleated sapphire. Device-related properties that improved with increasing growth temperature and those that showed a local maximum; Distinction of thin films of the IIIA...

  • Structure of GaN films grown by hydride vapor phase epitaxy. Romano, L.T.; Krusor, B.S. // Applied Physics Letters;10/20/1997, Vol. 71 Issue 16, p2283 

    Examines the structure of gallium nitride (GaN) films grown by hydride vapor phase epitaxy on sapphire substrates. Instruments used for studying the structure of GaN films; Examination of the dislocation densities of sapphire and silicon carbide; Achievement of fast growth rates by hydride...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics