Incorporation kinetics of indium in indium gallium nitride at low temperature

Storm, D. F.; Adelmann, C.; Daudin, B.
September 2001
Applied Physics Letters;9/10/2001, Vol. 79 Issue 11
Academic Journal
Recently, a phenomenological model of the incorporation kinetics of indium in indium gallium nitride was proposed based on published data from InGaN growth at relatively high fluxes and high substrate temperature, T[sub S]=650 °C. We present data from growths at much lower fluxes and at a significantly lower substrate temperature, which are also very well described by this model, as well as data for which the model appears less satisfactory. The nature of the indium self-blocking mechanism and the dependence of the model’s fitting parameters on the substrate temperature are discussed. © 2001 American Institute of Physics.


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