Reduction in crystallographic tilting of lateral epitaxial overgrown GaN by removal of oxide mask

Kim, Min Hong; Choi, Yoonho; Yi, Jaehyung; Yang, Min; Jeon, Jina; Khym, Sungwon; Leem, Shi-Jong
September 2001
Applied Physics Letters;9/10/2001, Vol. 79 Issue 11
Academic Journal
The lateral overgrowth of GaN was carried out by low-pressure metalorganic chemical vapor deposition. SiO[sub 2] mask was removed just before coalescence and a subsequent lateral overgrowth was carried out to complete the fabrication of a SiO[sub 2]-removed lateral epitaxial overgrown (LEO) GaN layer. The crystallographic tilting of (0002) plane, that was apparent in our standard LEO GaN layers, was absent in SiO[sub 2]-removed LEO layer and x-ray diffraction measurement indicated a superior crystallinity for the SiO[sub 2]-removed LEO layer. These results are attributed to the elimination of the interface between oxide mask and laterally grown GaN layer. The reduced crystallographic tilting in SiO[sub 2]-removed LEO GaN layer also enhanced the quality of the coalesced fronts, as determined from cathodoluminescence images. © 2001 American Institute of Physics.


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