TITLE

Reduction of nonradiative recombination centers in V-grooved AlGaAs/GaAs quantum wires grown using tertiarybutylarsine

AUTHOR(S)
Liu, Xing-Quan; Wang, Xue-Lun; Ogura, Mutsuo
PUB. DATE
September 2001
SOURCE
Applied Physics Letters;9/10/2001, Vol. 79 Issue 11
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report our comparative study on the luminescence recombination processes of V-grooved AlGaAs/GaAs quantum wires (QWRs) grown using tertiarybutylarsine (TBAs) and AsH[sub 3] as arsenic sources. Constant integrated photoluminescence (PL) intensity up to 120 K, as well as radiative efficiency of about 3000 times higher at room temperature, were observed for the TBAs sample compared with the AsH[sub 3] sample. Time-resolved PL measurements show a maximum decay time at temperature of as high as 240 K for the TBAs sample, which is about 100 K higher than that of similar samples grown using AsH[sub 3] as the arsenic source. These results suggest a dramatic reduction of nonradiative centers in QWR regions grown using TBAs as the arsenic source. © 2001 American Institute of Physics.
ACCESSION #
5113220

 

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