Reduction of nonradiative recombination centers in V-grooved AlGaAs/GaAs quantum wires grown using tertiarybutylarsine

Liu, Xing-Quan; Wang, Xue-Lun; Ogura, Mutsuo
September 2001
Applied Physics Letters;9/10/2001, Vol. 79 Issue 11
Academic Journal
We report our comparative study on the luminescence recombination processes of V-grooved AlGaAs/GaAs quantum wires (QWRs) grown using tertiarybutylarsine (TBAs) and AsH[sub 3] as arsenic sources. Constant integrated photoluminescence (PL) intensity up to 120 K, as well as radiative efficiency of about 3000 times higher at room temperature, were observed for the TBAs sample compared with the AsH[sub 3] sample. Time-resolved PL measurements show a maximum decay time at temperature of as high as 240 K for the TBAs sample, which is about 100 K higher than that of similar samples grown using AsH[sub 3] as the arsenic source. These results suggest a dramatic reduction of nonradiative centers in QWR regions grown using TBAs as the arsenic source. © 2001 American Institute of Physics.


Related Articles

  • Reevaluation of blueshifts introduced by lateral confinement in quantum-well wire structures. Gustafsson, A.; Liu, X.; Maximov, I.; Samuelson, L.; Seifert, W. // Applied Physics Letters;4/12/1993, Vol. 62 Issue 15, p1709 

    Examines blue shifts observed in quantum-wire luminescence. Transfer of excitons between areas of different thickness within a single quantum well (QW); Demonstration of reduced exciton transfers; Use of QW structure as a starting material for the fabrication of wire structures.

  • Quantum confinement in the Si-III (BC-8) phase of porous silicon. Allan, G.; Delerue, C. // Applied Physics Letters;5/5/1997, Vol. 70 Issue 18, p2437 

    Examines the effect of quantum confinement on porous silicon electronic structure. Simulation of optical properties of silicon nanocrystallites and quantum wires; Combination of empirical tight binding and ab initio local density calculations; Inconsistency of the observed luminescence with the...

  • Exciton transport into a single GaAs quantum wire studied by picosecond near-field optical spectroscopy. Richter, A.; Su¨ptitz, M.; Heinrich, D.; Lienau, Ch.; Elsaesser, T.; Ramsteiner, M.; No¨tzel, R.; Ploog, K. H. // Applied Physics Letters;10/12/1998, Vol. 73 Issue 15 

    We report a time-resolved near-field luminescence study of excitonic real-space transfer into single GaAs quantum wires. Excitons generated by local optical excitation in a 250 nm spot undergo diffusive transport over a length of several microns and are subsequently trapped into the quantum wire...

  • Polarization spectra of excitonic luminescence of bare ZnCdSe/ZnSe quantum wires. Lomasov, N. V.; Travnikov, V. V.; Kognovitskiı, S. O.; Gurevich, S. A.; Nesterov, S. I.; Skopina, V. I.; Rabe, M.; Henneberger, F. // Physics of the Solid State;Aug98, Vol. 40 Issue 8, p1413 

    Linearly polarized luminescence spectra of bare (unburied) semiconductor structures with ZnCdSe/ ZnSe quantum wires, obtained by reactive ion etching, were investigated. It was found that, regardless of the orientation of the linear polarization of the exciting light, the luminescence radiation...

  • Luminescence characteristics of quantum wires grown by organometallic chemical vapor deposition.... Kapon, E.; Kash, K. // Applied Physics Letters;1/27/1992, Vol. 60 Issue 4, p477 

    Examines the luminescence characteristics of quantum wires (QWR) grown by organometallic chemical vapor deposition on nonplanar substrates. Observation of QWR photoluminescence excitation spectra; Correlation between crescent size and growth time of quantum well layer; Details on the effective...

  • Condensation of silicon nanowires from silicon monoxide by thermal evaporation — An X-ray absorption spectroscopy investigation. Kim, P.-S. G.; Tang, Y.-H.; Sham, T.-K.; Lee, S. T. // Canadian Journal of Chemistry;Oct2007, Vol. 85 Issue 10, p695 

    We report a Si K-edge X-ray absorption fine structures (XAFS) study of silicon monoxide (SiO), the starting material for silicon nanowire preparation, its silicon nanowires, and the residue after the preparation of the starting material. The silicon nanowires were condensed onto three different...

  • Sol-gel synthesis and photoluminescence of p-type semiconductor Cr2O3 nanowires. Huaqiang Cao; Xianqing Qiu; Yu Liang; Meijuan Zhao; Qiming Zhu // Applied Physics Letters;6/12/2006, Vol. 88 Issue 24, p241112 

    Rhombohedral structure p-type semiconductor Cr2O3 nanowires were generated by sol-gel template technology with the diameters in the range of 100–300 nm and the lengths ca. 10 μm. A sharp ultraviolet photoluminescence band (full width at half maximum=13.8 nm) at the wavelength of 385 nm...

  • Luminescence of CdSe/Al2O3 Quantum Wires at High Photoexcitation Levels. Dneprovski&icaron;, V. S.; Zhukov, E. A.; Lyaskovski&icaron;, V. L.; Ryzhkov, M. V.; Tolpe&icaron;kin, I. V.; Shatalin, A. I. // Physics of the Solid State;Sep2004, Vol. 46 Issue 9, p1755 

    Nonlinear dependence of the CdSe/AI2O3 quantum wire luminescence intensity on the photoexcitation level and an asymmetric broadening of luminescence spectra accompanied by a high-frequency shift of the maximum are observed and explained in terms of the dominant filling of exciton phase space in...

  • Temperature dependent photoluminescence study on phosphorus doped ZnO nanowires. Shan, C. X.; Liu, Z.; Hark, S. K. // Applied Physics Letters;2/18/2008, Vol. 92 Issue 7, p073103 

    We report temperature dependent photoluminescence studies on phosphorus doped ZnO nanowires. The shape of the spectra is very similar to those of phosphorus doped ZnO films. The photoluminescence spectrum at 10 K is dominated by neutral acceptor bound exciton (A 0X) emissions. The acceptor...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics