TITLE

Coexistence behavior of the CuPt[sub B]-type and the CuAu–I-type ordered structures in highly strained Cd[sub x]Zn[sub 1-x]Te/GaAs heterostructures

AUTHOR(S)
Lee, H. S.; Lee, J. Y.; Kim, T. W.; Lee, D. U.; Choo, D. C.; Park, H. L.
PUB. DATE
September 2001
SOURCE
Applied Physics Letters;9/10/2001, Vol. 79 Issue 11
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ordered structures in highly strained Cd[sub x]Zn[sub 1-x]Te/GaAs heterostructures epitaxial layers grown on (001)GaAs substrates were investigated by using selected area electron diffraction pattern (SADP) and cross-sectional high-resolution transmission electron microscopy (HRTEM) measurements. The SADP results showed two sets of (1/2 1/2 1/2) superstructure reflections with symmetrical intensities along the [110] axis, and the corresponding HRTEM images indicated a doublet periodicity in the contrast of the {111} lattice planes. Two structures, one corresponding to the CuPt[sub B]-type ordering for each direction of the doublet periodicity on the {111} lattice planes along the [110] axis and the other corresponding to superstructure spots related to the CuAu–I type ordering were observed in the SADP. The doublet periodicity of 200 lattice fringes, associated with the CuAu–I-type ordered structure was also observed in the HRTEM image, and many antiphase boundaries were observed in ordered regions. The formation of the two ordered structures in the Cd[sub x]Zn[sub 1-x]Te epilayers might originate from the minimization of the relaxation energy due to the high strain effect resulting from the large lattice mismatch between the Cd[sub x]Zn[sub 1-x]Te epilayer and the GaAs substrate. These results provide important information on the microstructural properties for improving the efficiencies of Cd[sub x]Zn[sub 1-x]Te-based optoelectronic devices operating in the blue-green spectral region. © 2001 American Institute of Physics.
ACCESSION #
5113215

 

Related Articles

  • Cathodoluminescence imaging of patterned quantum well heterostructures grown on nonplanar substrates by molecular beam epitaxy. Clausen, E. M.; Kapon, E.; Tamargo, M. C.; Hwang, D. M. // Applied Physics Letters;2/19/1990, Vol. 56 Issue 8, p776 

    We report cathodoluminescence (CL) imaging and transmission electron microscopy (TEM) studies of patterned GaAs/AlAs quantum well (QW) heterostructures grown by molecular beam epitaxy on periodically corrugated substrates. Faceting and surface diffusion during crystal growth result in...

  • Photoluminescence of Heterostructures with Highly Strained Ga0.76In0.24As Quantum Wells Separated by GaAsyP1 � y Compensating Barriers. Shamakhov, V. V.; Vinokurov, D. A.; Stankevich, A. L.; Kapitonov, V. A.; Zorina, S. A.; Nikolaev, D. N.; Murashova, A. V.; Bondarev, A. D.; Tarasov, I. S. // Technical Physics Letters;Dec2005, Vol. 31 Issue 12, p993 

    Based on the results of model calculations and the data of photoluminescence measurements and transmission electron microscopy, the optimum composition (GaAs0.85P0.15) of compensating barriers for a structure with four highly strained Ga0.76In0.24As quantum wells (QWs) has been established that...

  • Improved GaAs/AlGaAs quantum-well heterostructures by organometallic vapor-phase epitaxy. Schaus, C. F.; Shealy, J. R.; Eastman, L. F.; Cooman, B. C.; Carter, C. B. // Journal of Applied Physics;1/15/1986, Vol. 59 Issue 2, p678 

    Investigates the properties of gallium arsenide and aluminum gallium arsenide quantum well heterostructures using transmission electron microscopy together with photoluminescence. Description of modifications to the reactor; Element used to characterize heterostructures; Factor used to...

  • Differential ion damage and its annealing behavior in AlAs/GaAs heterostructures. Cullis, A. G.; Smith, P. W.; Jacobson, D. C.; Poate, J. M. // Journal of Applied Physics;2/1/1991, Vol. 69 Issue 3, p1279 

    Presents a study that explored the nature of differential ion damage in aluminum arsenide-gallium arsenide epitaxial heterostructures using conventional and high-resolution transmission electron microscopy and Rutherford backscattering spectrometry. Use of silicon&supx; ion implantation to...

  • Structural characterization of II-VI separate confinement heterostructure lasers with Zn1-xMgxSySe1-y cladding layers. Petruzzello, J.; Gaines, J.; van der Sluis, P. // Journal of Applied Physics;1/1/1994, Vol. 75 Issue 1, p63 

    We have investigated the structural characteristics of II-VI separate confinement heterostructure lasers grown on GaAs substrates and containing Zn1-xMgxSySe1-y quaternary cladding layers, ZnSe or ZnSySe1-y guiding layers and Zn1-zCdzSe quantum well active layers. The study was performed with a...

  • Origin of a pair of stacking faults in pseudomorphic ZnSe epitaxial layers on GaAs. Ohno, Y.; Adachi, N.; Takeda, S. // Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p54 

    We have revealed the origin of typical extended defects in semiconductor heterostructures with heterovalent interfaces, namely pairs of stacking faults in pseudomorphic ZnSe epitaxial layers grown on a GaAs(001) substrate. We have taken structural images of the defects by means of...

  • Initial stage of epitaxial growth at the high temperature of GaAs and AlGaAs on Si by... Soga, T.; George, T.; Jimbo, T.; Umeno, M.; Weber, E.R. // Applied Physics Letters;3/18/1991, Vol. 58 Issue 11, p1170 

    Discusses the characterization of gallium arsenide (GaAs) and aluminum GaAs grown directly on silicon by transmission electron microscopy. Presence of high density of dislocations, stacking faults and microtwins in the thin GaAs layers; Reduction of defects in the planar AlGaAs nucleation layer.

  • High resolution transmission electron microscopy of proton-implanted gallium arsenide. Sadana, D. K.; Zavada, J. M.; Jenkinson, H. A.; Sands, T. // Applied Physics Letters;10/1/1985, Vol. 47 Issue 7, p691 

    High resolution transmission electron microscopy has been performed on cross-sectional specimens from high dose (1016 cm-2) H+-implanted (100) n-GaAs (300 keV at room temperature). It was found that annealing at 500 °C created small (20–50 Å) loops on {111} planes near the...

  • Reactions in Pd/GaAs(001) contacts at 7x10[sub 8] Pa pressure. Zhao, Y.C.; Wu, Z.Q. // Applied Physics Letters;1/28/1991, Vol. 58 Issue 4, p349 

    Presents the transmission electron microscopy and x-ray diffraction studies of Pd/GaAs contacts that were annealed in an argon ambient with a pressure of 7 x 10[sup 8] Pa. Ability of the ambient to inhibit the decomposition of As-rich phases and the reactions accompanying the As sublimation for...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics