Coexistence behavior of the CuPt[sub B]-type and the CuAu–I-type ordered structures in highly strained Cd[sub x]Zn[sub 1-x]Te/GaAs heterostructures

Lee, H. S.; Lee, J. Y.; Kim, T. W.; Lee, D. U.; Choo, D. C.; Park, H. L.
September 2001
Applied Physics Letters;9/10/2001, Vol. 79 Issue 11
Academic Journal
Ordered structures in highly strained Cd[sub x]Zn[sub 1-x]Te/GaAs heterostructures epitaxial layers grown on (001)GaAs substrates were investigated by using selected area electron diffraction pattern (SADP) and cross-sectional high-resolution transmission electron microscopy (HRTEM) measurements. The SADP results showed two sets of (1/2 1/2 1/2) superstructure reflections with symmetrical intensities along the [110] axis, and the corresponding HRTEM images indicated a doublet periodicity in the contrast of the {111} lattice planes. Two structures, one corresponding to the CuPt[sub B]-type ordering for each direction of the doublet periodicity on the {111} lattice planes along the [110] axis and the other corresponding to superstructure spots related to the CuAu–I type ordering were observed in the SADP. The doublet periodicity of 200 lattice fringes, associated with the CuAu–I-type ordered structure was also observed in the HRTEM image, and many antiphase boundaries were observed in ordered regions. The formation of the two ordered structures in the Cd[sub x]Zn[sub 1-x]Te epilayers might originate from the minimization of the relaxation energy due to the high strain effect resulting from the large lattice mismatch between the Cd[sub x]Zn[sub 1-x]Te epilayer and the GaAs substrate. These results provide important information on the microstructural properties for improving the efficiencies of Cd[sub x]Zn[sub 1-x]Te-based optoelectronic devices operating in the blue-green spectral region. © 2001 American Institute of Physics.


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