Formation of three-dimensional microstructures by electrochemical etching of silicon

Kleimann, P.; Linnros, J.; Juhasz, R.
September 2001
Applied Physics Letters;9/10/2001, Vol. 79 Issue 11
Academic Journal
This letter describes the promising technique of micromachining using the properties of electrochemical etching of (100)-oriented n-type silicon in a hydrofluoric acid electrolyte. The technique is based on electropolishing of a wafer except for areas where vertical structures are needed and does not require a periodic pattern. Predefined steps of a few microns depth prior to the electrochemical etching define the shape and position of the structures. The three-dimensional microstructure width can be adjusted with the etching parameters, also enabling the formation of free-standing structures. The feasibility of this technique is demonstrated by forming high aspect ratio microneedles and tubes. © 2001 American Institute of Physics.


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