Surface transfer hole doping of epitaxial graphene using MoO3 thin film

Zhenyu Chen; Santoso, Iman; Rui Wang; Lan Fei Xie; Hong Ying Mao; Han Huang; Yu Zhan Wang; Xing Yu Gao; Zhi Kuan Chen; Dongge Ma; Andrew Thye Shen Wee; Wei Chen
May 2010
Applied Physics Letters;5/24/2010, Vol. 96 Issue 21, p213104
Academic Journal
Synchrotron-based in situ photoelectron spectroscopy investigations demonstrate effective surface transfer p-type doping of epitaxial graphene (EG) thermally grown on 4H–SiC(0001) via the deposition of MoO3 thin film on top. The large work function difference between EG and MoO3 facilitates electron transfer from EG to the MoO3 thin film. This leads to hole accumulation in the EG layer with an areal hole density of about 1.0×1013 cm-2, and places the Fermi level 0.38 eV below the graphene Dirac point.


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