TITLE

A metallic molybdenum suboxide buffer layer for organic electronic devices

AUTHOR(S)
Greiner, M. T.; Helander, M. G.; Wang, Z. B.; Tang, W. M.; Qiu, J.; Lu, Z. H.
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/24/2010, Vol. 96 Issue 21, p213302
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Molybdenum trioxide (MoO3) is commonly used as a buffer layer in organic electronic devices to improve hole-injection. However, stoichiometric MoO3 is an insulator, and adds a series resistance. Here it is shown that a MoO3 buffer layer can be reduced to form a metallic oxide buffer that exhibits more favorable energy-level alignment with N,N′-diphenyl-N,N′-bis-(1-naphthyl)-1-1′-biphenyl-4,4′-diamine (α-NPD) than does MoO3. This buffer layer thus provides the conductivity of a metal with the favorable energy alignment of an oxide. Photoemission shows the reduced oxide contains Mo4+ and Mo5+, with a metallic valence band structure similar to MoO2.
ACCESSION #
51059280

 

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