Single photon emission from positioned GaAs/AlGaAs photonic nanowires

Heinrich, J.; Huggenberger, A.; Heindel, T.; Reitzenstein, S.; Höfling, S.; Worschech, L.; Forchel, A.
May 2010
Applied Physics Letters;5/24/2010, Vol. 96 Issue 21, p211117
Academic Journal
Positioned AlGaAs nanowires with an embedded axial heterostructure GaAs quantum dot (QD) on a prepatterned substrate have been grown. The geometry of the nanowires allows for an outcoupling of the emitted light through the nanowire tip and thereby to probe a single nanowire directly on the growth substrate. Single QD linewidths as small as 95 μeV and photon antibunching were observed at continuous wave laser excitation with a second order autocorrelation function g(2)(0)=0.46. The results represent an attractive bottom-up fabrication approach for the realization of high efficiency photonic wire based single photon sources.


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