Polarization control of electroluminescence from vertically stacked InAs/GaAs quantum dots

Inoue, Tomoya; Asada, Masaki; Yasuoka, Nami; Kojima, Osamu; Kita, Takashi; Wada, Osamu
May 2010
Applied Physics Letters;5/24/2010, Vol. 96 Issue 21, p211906
Academic Journal
We have developed a technique to control the polarization dependence of quantum dot (QD)-semiconductor optical amplifiers (SOAs) using vertically stacked self-assembled InAs QDs with moderately thick intermediate layers. By increasing the number of stacking layers, the transverse magnetic polarization component of electroluminescence (EL) from the cleaved edge surface of the SOA has been enhanced dramatically. Broadband and almost isotropic EL with a polarization difference of less than 1.2 dB has been demonstrated in a 1.3 μm optical communication band for nine-layer stacked QDs in the active region of the SOA.


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