TITLE

Proposal for efficient generation of spin-polarized current in silicon

AUTHOR(S)
Castelano, L. K.; Sham, L. J.
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/24/2010, Vol. 96 Issue 21, p212107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We propose a spin-dependent resonant tunneling structure to efficiently inject spin-polarized current into silicon. By means of a heavily doped polycrystalline Si between the ferromagnetic metal and Si, the Schottky barrier resistance is reduced and consequently the tunneling current density is raised. The small Fermi sea of the charge carriers in Si focuses the tunneling electrons to the resonant spin states within a small region of transverse momentum in the ferromagnet which creates the spin polarization of the current.
ACCESSION #
51059266

 

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