Tunnel magnetoresistance with improved bias voltage dependence in lattice-matched Fe/spinel MgAl2O4/Fe(001) junctions

Sukegawa, Hiroaki; Huixin Xiu; Ohkubo, Tadakatsu; Furubayashi, Takao; Niizeki, Tomohiko; Wenhong Wang; Kasai, Shinya; Mitani, Seiji; Inomata, Koichiro; Hono, Kazuhiro
May 2010
Applied Physics Letters;5/24/2010, Vol. 96 Issue 21, p212505
Academic Journal
We fabricated fully epitaxial Fe/MgAl2O4/Fe(001) magnetic tunnel junctions using plasma oxidation of an Mg/Al bilayer. The MgAl2O4 showed a (001)-oriented spinel-type structure, and there were few misfit dislocations at the interfaces between the MgAl2O4 and the two Fe layers due to a small lattice mismatch (∼1%). Tunnel magnetoresistance (TMR) ratios up to 117% (165%) were obtained at room temperature (15 K). The bias voltage for one-half of the zero-bias TMR ratio (Vhalf) was relatively large, ranging from 1.0 to 1.3 V at room temperature, which is attributed to the small misfit dislocation density.


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