Ultrahigh secondary electron emission of carbon nanotubes

Jun Luo; Warner, Jamie H.; Chaoqun Feng; Yagang Yao; Zhong Jin; Huiliang Wang; Caofeng Pan; Sheng Wang; Leijing Yang; Yan Li; Jin Zhang; Watt, Andrew A. R.; Lian-mao Peng; Jing Zhu; Briggs, G. Andrew D.
May 2010
Applied Physics Letters;5/24/2010, Vol. 96 Issue 21, p213113
Academic Journal
The secondary electron emission of the tube bodies of single-walled carbon nanotubes is found to be ultrahigh and comparable with that of diamond, when the nanotubes are connected with electron reservoir. Both of semiconducting and metallic nanotubes possess this property.


Related Articles

  • The effect of acoustic phonon scattering on the carrier mobility in the semiconducting zigzag single wall carbon nanotubes. Xu, B.; Xia, Y. D.; Yin, J.; Wan, X. G.; Jiang, K.; Li, A. D.; Wu, D.; Liu, Z. G. // Applied Physics Letters;5/3/2010, Vol. 96 Issue 18, p183108 

    Carrier mobilities of the semiconducting single wall carbon nanotubes (SWCNTs) have been studied by using the first-principles calculations with the deformation potential approximation, which only considers the scattering by the longitudinal acoustic phonons based on the adapting...

  • Proximity and anomalous field-effect characteristics in double-wall carbon nanotubes. Lu, Jie; Yin, Sun; Peng, L. M.; Sun, Z. Z.; Wang, X. R. // Applied Physics Letters;1/29/2007, Vol. 90 Issue 5, p052109 

    Proximity effect on field-effect characteristic in double-wall carbon nanotubes is investigated. In a semiconductor-metal double-wall carbon nanotube, the penetration of electron wave functions in the metallic shell to the semiconducting shell turns the original semiconducting shell into a metal...

  • Studying local surface electric conductivity of a ZnSe/CdSe/ZnSe heterostructure by scanning tunneling microscopy in the field electron emission regime. Masalov, S. A.; Evtikhiev, V. P.; Rastegaeva, M. G.; Ivanov, S. V. // Technical Physics Letters;Jun2009, Vol. 35 Issue 6, p504 

    The surface morphology and local electric conductivity of a ZnSe/CdSe/ZnSe nanoheterostructure have been studied by scanning tunneling microscopy (STM) in the field electron emission regime. The homogeneity of the local conductivity distribution in a near-surface layer has been evaluated. The...

  • The Relation Between Crystalline Phase, Electronic Structure, and Dielectric Properties in High-K Gate Stacks. Sayan, S.; Croft, M.; Nguyen, N. V.; Emge, T.; Ehrstein, J.; Levin, I.; Suehle, J.; Bartynski, R. A.; Garfunkel, E. // AIP Conference Proceedings;2005, Vol. 788 Issue 1, p92 

    As high permittivity dielectrics approach use in metal-oxide-semiconductor field effect transistor (MOSFET) production, an atomic level understanding of their electronic and dielectric properties is being rigorously examined. In our work we illustrate studies leading to such an understanding for...

  • Electron capture cross sections of InAs/GaAs quantum dots. Engström, O.; Kaniewska, M.; Fu, Y.; Piscator, J.; Malmkvist, M. // Applied Physics Letters;10/4/2004, Vol. 85 Issue 14, p2908 

    By measuring the thermal emission rates of electrons from InAs/GaAs quantum dots, capture cross sections in the extremely high region of 10-11–10-10 cm2 have been found. These data have been confirmed by using an additional method based on a static measurement at thermal equilibrium,...

  • A porous silicon diode as a source of low-energy free electrons at milli-Kelvin temperatures. Pilla, S.; Naberhuis, B.; Goodkind, J. // Journal of Applied Physics;7/15/2005, Vol. 98 Issue 2, p024508 

    We have developed a porous silicon (PS) diode that yields free-electron currents with energies <0.1 eV below 77 K. The power dissipated during emission is low so that pulses of electrons can be produced below 100 mK without raising the temperature of the system. Free electrons were generated in...

  • Perpendicular hot electron transport in the spin-valve photodiode. Huang, Biqin; Appelbaum, Ian // Journal of Applied Physics;8/1/2006, Vol. 100 Issue 3, p034501 

    The spin-valve photodiode is a ferromagnetic metal multilayer/n-type semiconductor Schottky device operated by photoexciting hot electrons in the metal and causing internal photoemission (IPE) into the semiconductor. Simple IPE theory predicts that the magnitude of the spin-valve effect...

  • Erratum: 'Kinase detection with gallium nitride based high electron mobility transistors' [Appl. Phys. Lett. 103, 013701 (2013)]. Makowski, Matthew S.; Bryan, Isaac; Sitar, Zlatko; Arellano, Consuelo; Xie, Jinqiao; Collazo, Ramon; Ivanisevic, Albena // Applied Physics Letters;8/19/2013, Vol. 103 Issue 8, p089902 

    A correction to the article "Kinase detection with gallium nitride based high electron mobility transistors" that was published in a previous issue of the journal is presented.

  • Improvement of Electron Field Emission in Patterned Carbon Nanotubes by High Temperature Hydrogen Plasma Treatment. Sigen Wang; Sellin, Paul. J.; Jun Lian; Özsan, Ersin; Sha Chang // Current Nanoscience;Feb2009, Vol. 5 Issue 1, p54 

    In this paper, we report a significant improvement of electron field emission property in patterned carbon nanotubes films by using a high temperature (650 °C) hydrogen plasma treatment. This treatment was found to greatly increase the emission current, emission uniformity and stability. The...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics