TITLE

Channel stress measurements of 45 nm node transistors with embedded silicon-germanium source and drain using ultraviolet Raman spectroscopy

AUTHOR(S)
Wong, C. P.; Kasim, J.; Liu, J. P.; See, A.; Shen, Z. X.
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/24/2010, Vol. 96 Issue 21, p213513
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the use of ultraviolet Raman spectroscopy to measure the average channel stress for 45 nm node transistors with embedded silicon-germanium (SiGe) source and drain. Direct probing of the channel for stress measurements was made possible by removing the polycrystalline silicon gate using a simple and cost-free approach. We demonstrate the feasibility of this method for measuring channel stress of dense transistor structures with varying pitch lengths, with ∼80 nm SiGe selectively grown in the source and drain regions.
ACCESSION #
51059250

 

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