Channel stress measurements of 45 nm node transistors with embedded silicon-germanium source and drain using ultraviolet Raman spectroscopy

Wong, C. P.; Kasim, J.; Liu, J. P.; See, A.; Shen, Z. X.
May 2010
Applied Physics Letters;5/24/2010, Vol. 96 Issue 21, p213513
Academic Journal
We report the use of ultraviolet Raman spectroscopy to measure the average channel stress for 45 nm node transistors with embedded silicon-germanium (SiGe) source and drain. Direct probing of the channel for stress measurements was made possible by removing the polycrystalline silicon gate using a simple and cost-free approach. We demonstrate the feasibility of this method for measuring channel stress of dense transistor structures with varying pitch lengths, with ∼80 nm SiGe selectively grown in the source and drain regions.


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