TITLE

Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections

AUTHOR(S)
O'Regan, T. P.; Hurley, P. K.; Sorée, B.; Fischetti, M. V.
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/24/2010, Vol. 96 Issue 21, p213514
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The capacitance-voltage (C-V) characteristic is calculated for p-type In0.53Ga0.47As metal-oxide-semiconductor (MOS) structures based on a self-consistent Poisson–Schrödinger solution. For strong inversion, charge quantization leads to occupation of the satellite valleys which appears as a sharp increase in the capacitance toward the oxide capacitance. The results indicate that the charge quantization, even in the absence of interface defects (Dit), is a contributing factor to the experimental observation of an almost symmetric C-V response for In0.53Ga0.47As MOS structures. In addition, nonparabolic corrections are shown to enhance the depopulation of the Γ valley, shifting the capacitance increase to lower inversion charge densities.
ACCESSION #
51059249

 

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