TITLE

Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer

AUTHOR(S)
Shinhyuk Yang; Doo-Hee Cho; Min Ki Ryu; Sang-Hee Ko Park; Chi-Sun Hwang; Jin Jang; Jae Kyeong Jeong
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/24/2010, Vol. 96 Issue 21, p213511
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This study examined the impact of the passivation layer on the light-enhanced bias instability of Al–Sn–Zn–In–O (AT–ZIO) thin film transistors. The suitably passivated device exhibited only a threshold voltage (Vth) shift of 0.72 V under light-illuminated negative-thermal stress conditions, whereas the device without a passivation layer suffered from a huge negative Vth shift of >11.5 V under identical conditions. The photocreated hole trapping model could not itself explain this behavior. Instead, the light-enhanced Vth instability of the unpassivated device would result mainly from the photodesorption of adsorbed oxygen ions after exposing the AT–ZIO back-surface in an ambient atmosphere.
ACCESSION #
51059248

 

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