TITLE

Influence of uniaxial mechanical stress on the high frequency performance of metal-oxide-semiconductor field effect transistors on (100) Si wafer

AUTHOR(S)
Younggun Han; Koganemaru, Masaaki; Ikeda, Toru; Miyazaki, Noriyuki; Woon Choi; Tomokage, Hajime
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/24/2010, Vol. 96 Issue 21, p213515
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effects of uniaxial mechanical stress on the radio frequency performance of n- and p-metal-oxide-semiconductor field effect transistors (MOSFETs) are investigated up to 10 GHz. Under tensile stress, the gate transconductance (gm) increases in the n-MOSFETs while it decreases in the p-MOSFETs, whereas the results were vice versa for compressive stress. The total gate capacitance (CG) extracted from scattering parameters increases (decreases) under tensile (compressive) stress for both n- and p-MOSFETs, which is explained by the variation in the effective mass perpendicular to the Si/SiO2 interface. The cut-off frequency (fT) varies in inverse proportion to the CG variation.
ACCESSION #
51059247

 

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