Addition of aluminum to solution processed conductive indium tin oxide thin film for an oxide thin film transistor

Jeon, J. H.; Hwang, Y. H.; Bae, B. S.; Kwon, H. L.; Kang, H. J.
May 2010
Applied Physics Letters;5/24/2010, Vol. 96 Issue 21, p212109
Academic Journal
Aluminum was added to a solution-processed conductive indium tin oxide thin film to be optimized as a channel layer for a thin film transistor (TFT). The conductive crystalline thin film becomes an amorphous semiconductor as the band gap enlarges with increasing Al content. Also, systematic variation in TFT characteristics was observed clearly, displaying transformation to a semiconductor. At the final composition of (Al2O3)0.3(In2O3)0.6(SnO2)0.1, the film channel layer exhibits a high mobility of 13.3 cm2 V-1 s-1, a high on-to-off ratio of 107 and a low subthreshold swing of 1.01 V/dec.


Related Articles

  • Investigation of intrinsic channel characteristics of hydrogenated amorphous silicon thin-film transistors by gated-four-probe structure. Chiang, Chun-sung; Chen, Chun-ying; Kanicki, Jerzy; Takechi, Kazushige // Applied Physics Letters;6/1/1998, Vol. 72 Issue 22 

    We use a new hydrogenated amorphous silicon (a-Si:H) device structure, the gated-four-probe a-Si:H thin-film transistor (TFT), to investigate the intrinsic channel characteristics of inverted-staggered a-Si:H TFTs without the influence of source/drain series resistances. The experimental results...

  • Improved performance of amorphous silicon thin film transistors by cyanide treatment. Aiyer, Hemantkumar N.; Nishioka, Daikichi; Matsuki, Nobuyuki; Shinno, Hiroyuki; Perera, V. P. S.; Chikyow, Toyohiro; Kobayashi, Hikaru; Koinuma, Hideomi // Applied Physics Letters;2/5/2001, Vol. 78 Issue 6, p751 

    We have examined the impact of a simple, wet chemical postgrowth treatment of "immersing in KCN solution" on the performance of inverted staggered amorphous silicon n-channel thin film transistors. Results show that the cyanide treatment significantly improves the overall transistor performance...

  • Improved stability of deuterated amorphous silicon thin film transistors. Wei, Jeng-Hua; Lee, Si-Chen // Journal of Applied Physics;1/1/1999, Vol. 85 Issue 1, p543 

    Determines the characteristics of hydrogenated amorphous silicon thin film transistors (TFT). Stability of deuterated amorphous silicon thin film transistors; Drain current analysis; Attributes of quality TFT fabricated by plasma treatment.

  • Low-frequency noise in a thin active layer alpha-Si:H thin-film transistors. Chen, X.Y.; Deen, M.J. // Journal of Applied Physics;6/1/1999, Vol. 85 Issue 11, p7952 

    Investigates the low-frequency noise of hydrogenated-amorphous-silicon thin-film transistors (TFT) with a thin active layer and an inverted staggered device structure operating in the conducting mode. Characteristics of the current-voltage of the hydrogenated-amorphous-silicon TFT; Noise...

  • Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation. Kwang-Won Jo; Won-Ju Cho // Applied Physics Letters;11/24/2014, Vol. 105 Issue 21, p1 

    In this study, we evaluated the effects of microwave irradiation (MWI) post-deposition-annealing (PDA) treatment on the gate bias stress instability of amorphous indium-gallium-zinc oxide thinfilm transistors (a-IGZO TFTs) and compared the results with a conventional thermal annealing PDA...

  • Time and temperature dependence of instability mechanisms in amorphous silicon thin-film transistors. Powell, M. J.; van Berkel, C.; Hughes, J. R. // Applied Physics Letters;4/3/1989, Vol. 54 Issue 14, p1323 

    We have measured the time and temperature dependence of the two prominent instability mechanisms in amorphous silicon thin-film transistors, namely, the creation of metastable states in the a-Si:H and the charge trapping in the silicon nitride gate insulator. The state creation process shows a...

  • Determination of the density of states at the Fermi level of hydrogenated amorphous silicon in.... Hoe Sup Soh; Choochon Lee // Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p779 

    Examines the space charge limited effect in hydrogenated amorphous silicon thin-film transistors. Determination of the density of states at the Fermi level; Increase in drain current caused by space charge limited current flow; Attribution of interface charges to the formation of electron...

  • Characterization of a-Si:H based metal/insulator/semiconductor structures by feedback charge... Thurzo, I.; Teramura, S.; Durny, R.; Naádazdy, V.; Kumeda, M.; Shimizu, T. // Journal of Applied Physics;11/1/1997, Vol. 82 Issue 9, p4372 

    Reports on the measurement of feedback charge capacitance-voltage characteristics and spectra of charge deep-level transient spectroscopy on hydrogenated amorphous silicon (a-Si:H) based metal/insulator/semiconductor structures. Confirmation of the inhomogeneous density of states in a-Si:H;...

  • Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors. Choo, M. H.; Kim, Jae Hoon; Im, Seongil // Applied Physics Letters;12/9/2002, Vol. 81 Issue 24, p4640 

    We report on the hole transport behavior in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors. Five organic thin-film transistors (OTFTs) were fabricated by evaporating the pentacene films at rates of 1, 3, 5, and 7 Ål/s at 25 °C (RT), and 7 Ã…/s at 60 °C....


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics