Pinning of recombination-enhanced dislocation motion in 4H–SiC: Role of Cu and EH1 complex

Bin Chen; Matsuhata, Hirofumi; Sekiguchi, Takashi; Ohyanagi, Takasumi; Kinoshita, Akimasa; Okumura, Hajime
May 2010
Applied Physics Letters;5/24/2010, Vol. 96 Issue 21, p212110
Academic Journal
We report on the pinning of recombination-enhanced dislocation motion in 4H–SiC by the implantation of Cu. The Cu was found to be preferentially gettered at basal plane dislocations (BPDs). Both EH1 and Z1/2 center were detected in 4H–SiC by cathodoluminescence. It was noticed that the EH1 has high luminescence intensity at the central part of the BPDs, while the Z1/2 does not. The complex of Cu and EH1 is regarded to be the cause for the pinning effect. The possible reason for the pinning is discussed.


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