Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe–V/MgO/Fe magnetic tunnel junctions

Herranz, D.; Bonell, F.; Gomez-Ibarlucea, A.; Andrieu, S.; Montaigne, F.; Villar, R.; Tiusan, C.; Aliev, F. G.
May 2010
Applied Physics Letters;5/17/2010, Vol. 96 Issue 20, p202501
Academic Journal
Alloying Fe electrodes with V, through reduced FeV/MgO interface mismatch in epitaxial magnetic tunnel junctions with MgO barriers, notably suppresses both nonmagnetic (parallel) and magnetic (antiparallel) state 1/f noise and enhances tunneling magnetoresistance. A comparative study of the room temperature electron transport and low frequency noise in Fe1-xVx/MgO/Fe and Fe/MgO/Fe1-xVx magnetic tunnel junctions with 0≤x≤0.25 reveals that V doping of the bottom electrode for x<0.1 reduces in nearly two orders of magnitude the normalized nonmagnetic and magnetic 1/f noise. We attribute the enhanced TMR and suppressed 1/f noise to strongly reduced misfit and dislocation density.


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