TITLE

Mechanisms controlling the phase and dislocation density in epitaxial silicon films grown from silane below 800 °C

AUTHOR(S)
Teplin, Charles W.; Alberi, Kirstin; Shub, Maxim; Beall, Carolyn; Martin, Ina T.; Romero, Manuel J.; Young, David L.; Reedy, Robert C.; Stradins, Paul; Branz, Howard M.
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/17/2010, Vol. 96 Issue 20, p201901
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We construct a phase diagram for silicon layer growth on (001) Si by hot-wire chemical vapor deposition (HWCVD), for rates from 10 to 150 nm/min and for substrate temperatures from 500 to 800 °C. Our results show that a mixed mono and dihydride surface termination during growth causes polycrystalline growth; some H-free sites are needed for epitaxy. For epitaxial films (T>620 °C), the dislocation density decreases with increasing growth temperature because of reduced O contamination of the surface. The best HWCVD epitaxial layers have dislocation densities of 105 cm-2.
ACCESSION #
50827869

 

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