Surface acoustic wave devices based on AlN/sapphire structure for high temperature applications

Aubert, Thierry; Elmazria, Omar; Assouar, Badreddine; Bouvot, Laurent; Oudich, Mourad
May 2010
Applied Physics Letters;5/17/2010, Vol. 96 Issue 20, p203503
Academic Journal
AlN/sapphire layered structure has been investigated as a potential substrate for surface acoustic wave (SAW) devices operating at high temperatures up to 950 °C under air atmosphere. Frequency characterizations of the SAW delay lines based on this structure indicate a slight increase of 2 dB in the insertion losses after annealing for 30 min at 900 °C. Scanning electron and atomic force microscopy as well as x-ray diffraction measurements suggest that theses losses are due to the deterioration of the Pt/Ta electrodes and to a slight oxidation of the AlN film.


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