Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge

Napolitani, E.; Bisognin, G.; Bruno, E.; Mastromatteo, M.; Scapellato, G. G.; Boninelli, S.; de Salvador, D.; Mirabella, S.; Spinella, C.; Carnera, A.; Priolo, F.
May 2010
Applied Physics Letters;5/17/2010, Vol. 96 Issue 20, p201906
Academic Journal
The dissolution of interstitial-type end-of-range (EOR) damage in preamorphized Ge is shown to induce a transient enhanced diffusion of an epitaxially grown boron delta at temperatures above 350 °C that saturates above 420 °C. The B diffusion events are quantitatively correlated with the measured positive strain associated with the EOR damage as a function of the annealing temperature with an energy barrier for the EOR damage dissolution of 2.1±0.3 eV. These results unambiguously demonstrate that B diffuses in Ge through a mechanism assisted by self-interstitials, and impose considering the interstitial implantation damage for the modeling of impurity diffusion in Ge.


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