TITLE

Improved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess

AUTHOR(S)
Kuan-Wei Lee; Hsien-Cheng Lin; Fang-Ming Lee; Hou-Kuei Huang; Yeong-Her Wang
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/17/2010, Vol. 96 Issue 20, p203506
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The metal-oxide-semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) with an oxide grown by liquid phase oxidation on the InGaAs capping layer without a gate recess exhibits a lower leakage current density with suppressed impact ionization, better microwave characteristics, and improved high frequency noise performance compared to the conventional MHEMT with a recessed gate. The improved high frequency performance is due to the lower gate-source and gate-drain capacitances of the InAlAs/InGaAs MOS-MHEMT. Reduced surface recombination and impact ionization may also contribute to the improved frequency response, noise performance, and associated gain.
ACCESSION #
50827843

 

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