Mechanism of surface leakage of nanoscale Schottky contacts between ErSi2 nanoislands and Si(001)

Song, J. Q.; Ding, T.; Cai, Q.
May 2010
Applied Physics Letters;5/17/2010, Vol. 96 Issue 20, p203113
Academic Journal
The surface leakage mechanism of nanoscale Schottky contacts between epitaxially grown ErSi2 nanoislands and p-Si(100) is investigated by using controlled surface adsorption of O2 and NH3. The surface leakage conduction is found to play a dominant role in the electrical transport of the nanocontacts. Interestingly, the surface leakage current increases linearly with reverse bias but it increases exponentially with forward bias. This behavior can be explained using surface-state conduction with reverse bias and low surface barrier region with forward bias.


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