TITLE

Probing stress effects in single crystal organic transistors by scanning Kelvin probe microscopy

AUTHOR(S)
Teague, Lucile C.; Jurchescu, Oana D.; Richter, Curt A.; Subramanian, Sankar; Anthony, John E.; Jackson, Thomas N.; Gundlach, David J.; Kushmerick, James G.
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/17/2010, Vol. 96 Issue 20, p203305
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report scanning Kelvin probe microscopy (SKPM) of single crystal difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic transistors. SKPM provides a direct measurement of the intrinsic charge transport in the crystals independent of contact effects and reveals that degradation of device performance occurs over a time period of minutes as the diF-TESADT crystal becomes charged.
ACCESSION #
50827816

 

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